PMN30XPEAX
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL MOSFET FOR AUTOMOTI
$0.15
Available to order
Reference Price (USD)
1+
$0.14883
500+
$0.1473417
1000+
$0.1458534
1500+
$0.1443651
2000+
$0.1428768
2500+
$0.1413885
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PMN30XPEAX by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PMN30XPEAX inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 8V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta), 7.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
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