IMBG65R030M1HXTMA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET PG-TO263-
$22.11
Available to order
Reference Price (USD)
1+
$22.11000
500+
$21.8889
1000+
$21.6678
1500+
$21.4467
2000+
$21.2256
2500+
$21.0045
Exquisite packaging
Discount
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Boost your electronic applications with IMBG65R030M1HXTMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IMBG65R030M1HXTMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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