NTMFS5H600NLT1G-IRH1
onsemi
onsemi
T8 60V LOW COSS
$2.26
Available to order
Reference Price (USD)
1+
$2.25517
500+
$2.2326183
1000+
$2.2100666
1500+
$2.1875149
2000+
$2.1649632
2500+
$2.1424115
Exquisite packaging
Discount
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onsemi presents NTMFS5H600NLT1G-IRH1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTMFS5H600NLT1G-IRH1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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