IMW65R057M1HXKSA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
$15.77
Available to order
Reference Price (USD)
1+
$15.77000
500+
$15.6123
1000+
$15.4546
1500+
$15.2969
2000+
$15.1392
2500+
$14.9815
Exquisite packaging
Discount
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Discover high-performance IMW65R057M1HXKSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IMW65R057M1HXKSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
- Vgs (Max): +20V, -2V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 133W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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