NTTFS080N10GTAG
onsemi
onsemi
100V MVSOA IN U8FL PACKAGE
$0.37
Available to order
Reference Price (USD)
1+
$0.37347
500+
$0.3697353
1000+
$0.3660006
1500+
$0.3622659
2000+
$0.3585312
2500+
$0.3547965
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with NTTFS080N10GTAG, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NTTFS080N10GTAG provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 22µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 560.5 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
Related Products
Renesas Electronics America Inc
2SK1274-AZ
Harris Corporation
RFP7N40
Infineon Technologies
IPT044N15N5ATMA1
Diodes Incorporated
DMT47M2SFVWQ-7
Harris Corporation
RFB18N10CS
Renesas
UPA1759G-E1-A
Renesas Electronics America Inc
2SK1582-T2B-A
onsemi
NVTYS025P04M8LTWG
onsemi
NTTFS8D1N08HTAG
Diodes Incorporated