RFB18N10CS
Harris Corporation
Harris Corporation
MOSFET N-CH 100V 18A TO220AB-5
$2.30
Available to order
Reference Price (USD)
1+
$2.30000
500+
$2.277
1000+
$2.254
1500+
$2.231
2000+
$2.208
2500+
$2.185
Exquisite packaging
Discount
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Discover RFB18N10CS, a versatile Transistors - FETs, MOSFETs - Single solution from Harris Corporation, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: Current Sensing
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB-5
- Package / Case: TO-220-5
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