DMT67M8LCGQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 16A/64.6A 8DFN
$0.51
Available to order
Reference Price (USD)
1+
$0.50558
500+
$0.5005242
1000+
$0.4954684
1500+
$0.4904126
2000+
$0.4853568
2500+
$0.480301
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMT67M8LCGQ-7, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMT67M8LCGQ-7 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 64.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8 (Type B)
- Package / Case: 8-PowerVDFN
Related Products
Toshiba Semiconductor and Storage
TPW2900ENH,L1Q
Vishay Siliconix
SIR820DP-T1-GE3
Micro Commercial Co
MCAC40N03A-TP
Renesas Electronics America Inc
2SK1580(0)-T1-A
onsemi
NVLJS053N12MCLTAG
Renesas Electronics America Inc
RJK03D2DPA-00#J53
Diodes Incorporated
DMP4011SPS-13
Diodes Incorporated
DMT35M4LFDF-13
Infineon Technologies
IRF6811STRPBF-INF
Diodes Incorporated