IPT044N15N5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-HSOF-8
$7.99
Available to order
Reference Price (USD)
1+
$7.99000
500+
$7.9101
1000+
$7.8302
1500+
$7.7503
2000+
$7.6704
2500+
$7.5905
Exquisite packaging
Discount
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Experience the power of IPT044N15N5ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPT044N15N5ATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 221µA
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
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