NTMSD3P102R2
onsemi
onsemi
MOSFET P-CH 20V 2.34A 8SOIC
$0.19
Available to order
Reference Price (USD)
2,500+
$0.45640
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMSD3P102R2 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMSD3P102R2 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 730mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IPB057N06NATMA1
onsemi
FCH029N65S3-F155
Goford Semiconductor
GT088N06T
STMicroelectronics
STD13NM60ND
Texas Instruments
CSD17306Q5A
NXP USA Inc.
PMZ600UNE315
Infineon Technologies
IPD70N10S312ATMA1
onsemi
MCH6431-P-TL-H
NXP Semiconductors
PMZB1200UPEYL
Infineon Technologies