STD13NM60ND
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 11A DPAK
$4.55
Available to order
Reference Price (USD)
2,500+
$2.13237
5,000+
$2.06142
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover STD13NM60ND, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 109W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Texas Instruments
CSD17306Q5A
NXP USA Inc.
PMZ600UNE315
Infineon Technologies
IPD70N10S312ATMA1
onsemi
MCH6431-P-TL-H
NXP Semiconductors
PMZB1200UPEYL
Infineon Technologies
BSP129H6906XTSA1
Diodes Incorporated
DMN2400UFB-7
Taiwan Semiconductor Corporation
TSM70N1R4CH C5G
Nexperia USA Inc.
PMXB40UNEZ
IXYS