BSP129H6906XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 240V 350MA SOT223-4
$1.37
Available to order
Reference Price (USD)
1,000+
$0.52293
2,000+
$0.49167
5,000+
$0.46978
10,000+
$0.45415
25,000+
$0.45188
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSP129H6906XTSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSP129H6906XTSA1 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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