IXXA30N65C3HV
IXYS
IXYS
IGBT
$5.29
Available to order
Reference Price (USD)
50+
$2.83500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IXXA30N65C3HV Single IGBTs from IXYS, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, IXXA30N65C3HV ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 52 A
- Current - Collector Pulsed (Icm): 113 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 24A
- Power - Max: 230 W
- Switching Energy: 500µJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 37 nC
- Td (on/off) @ 25°C: 33ns/125ns
- Test Condition: 400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr): 33 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
Related Products
Fairchild Semiconductor
FGA50N100BNTTU
Infineon Technologies
AIKQ120N60CTXKSA1
onsemi
HGTG30N60A4D
Renesas Electronics America Inc
RJH60V2BDPP-M0#T2
Sanken
SLA5222
Infineon Technologies
IKW03N120H2FKSA1
Microchip Technology
APT50GT120LRDQ2G
Infineon Technologies
AUIRGP4062D
onsemi
NGB8206NG
STMicroelectronics