NGB8206NG
onsemi
onsemi
IGBT 390V 20A 150W D2PAK
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NGB8206NG Single IGBT from onsemi redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. onsemi stands behind every NGB8206NG with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 390 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
- Power - Max: 150 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -/5µs
- Test Condition: 300V, 9A, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
Related Products
STMicroelectronics
STGP4M65DF2
Infineon Technologies
SKB02N120ATMA1
Rohm Semiconductor
RGTV80TS65DGC11
Rohm Semiconductor
RGTVX2TS65GC11
Infineon Technologies
IKW40N65WR5XKSA1
Microchip Technology
APT50GT120B2RDQ2G
Rohm Semiconductor
RGPR20NS43HRTL
Infineon Technologies
IKA08N65F5XKSA1
Microchip Technology
APT25GR120S
IXYS