STGP4M65DF2
STMicroelectronics
STMicroelectronics
IGBT M SERIES 650V 4A LOW LOSS
$1.10
Available to order
Reference Price (USD)
1+
$1.30000
50+
$1.11120
100+
$0.92480
500+
$0.77568
1,000+
$0.62658
2,500+
$0.58930
5,000+
$0.56445
Exquisite packaging
Discount
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Discover high-performance STGP4M65DF2 Single IGBTs from STMicroelectronics, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, STGP4M65DF2 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 16 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 68 W
- Switching Energy: 40µJ (on), 136µJ (off)
- Input Type: Standard
- Gate Charge: 15.2 nC
- Td (on/off) @ 25°C: 12ns/86ns
- Test Condition: 400V, 4A, 47Ohm, 15V
- Reverse Recovery Time (trr): 133 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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