IKW03N120H2FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 9.6A 62.5W TO247-3
$1.37
Available to order
Reference Price (USD)
1+
$1.37000
500+
$1.3563
1000+
$1.3426
1500+
$1.3289
2000+
$1.3152
2500+
$1.3015
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKW03N120H2FKSA1 Single IGBT by Infineon Technologies is a game-changer for energy-efficient systems. Ideal for HVAC, robotics, and power distribution, it boasts fast turn-off times and low gate drive requirements. Its advanced technology reduces energy waste and improves system longevity. Trust Infineon Technologies for premium-quality transistors backed by exceptional support. Request a sample or quote now to start your next innovation!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 9.6 A
- Current - Collector Pulsed (Icm): 9.9 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
- Power - Max: 62.5 W
- Switching Energy: 290µJ
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 9.2ns/281ns
- Test Condition: 800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
Related Products
Microchip Technology
APT50GT120LRDQ2G
Infineon Technologies
AUIRGP4062D
onsemi
NGB8206NG
STMicroelectronics
STGP4M65DF2
Infineon Technologies
SKB02N120ATMA1
Rohm Semiconductor
RGTV80TS65DGC11
Rohm Semiconductor
RGTVX2TS65GC11
Infineon Technologies
IKW40N65WR5XKSA1
Microchip Technology
APT50GT120B2RDQ2G
Rohm Semiconductor