TK100E08N1,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 80V 100A TO220
$3.79
Available to order
Reference Price (USD)
1+
$5.60000
50+
$4.50000
100+
$4.10000
500+
$3.32000
1,000+
$2.80000
Exquisite packaging
Discount
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Boost your electronic applications with TK100E08N1,S1X, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TK100E08N1,S1X meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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