IXTH1N450HV
IXYS
IXYS
MOSFET N-CH 4500V 1A TO247HV
$44.66
Available to order
Reference Price (USD)
1+
$32.60000
30+
$27.71000
120+
$25.75400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IXTH1N450HV by IXYS, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IXTH1N450HV ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 4500 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247HV
- Package / Case: TO-247-3 Variant
Related Products
Vishay Siliconix
SQJ457EP-T1_GE3
Infineon Technologies
BSC889N03LSG
Vishay Siliconix
SISS80DN-T1-GE3
Alpha & Omega Semiconductor Inc.
AOK53S60
onsemi
NTMFS5C670NLT3G
IXYS
IXTR102N65X2
Fairchild Semiconductor
FQAF8N80
PN Junction Semiconductor
P3M171K0K3
STMicroelectronics
STP46N60M6
onsemi