SISS80DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 58.3A/210A PPAK
$1.75
Available to order
Reference Price (USD)
1+
$1.75000
500+
$1.7325
1000+
$1.715
1500+
$1.6975
2000+
$1.68
2500+
$1.6625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SISS80DN-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SISS80DN-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): +12V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 65W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
Related Products
Alpha & Omega Semiconductor Inc.
AOK53S60
onsemi
NTMFS5C670NLT3G
IXYS
IXTR102N65X2
Fairchild Semiconductor
FQAF8N80
PN Junction Semiconductor
P3M171K0K3
STMicroelectronics
STP46N60M6
onsemi
NVTFS5C466NLTAG
Renesas Electronics America Inc
2SK3107-T1-A
onsemi
NVHL080N120SC1
UnitedSiC