P3M171K0K3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1700V 6A TO-247-3
$6.10
Available to order
Reference Price (USD)
1+
$6.10000
500+
$6.039
1000+
$5.978
1500+
$5.917
2000+
$5.856
2500+
$5.795
Exquisite packaging
Discount
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Discover P3M171K0K3, a versatile Transistors - FETs, MOSFETs - Single solution from PN Junction Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 68W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3
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