STP46N60M6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 36A TO220
$6.98
Available to order
Reference Price (USD)
1+
$6.98000
500+
$6.9102
1000+
$6.8404
1500+
$6.7706
2000+
$6.7008
2500+
$6.631
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance STP46N60M6 from STMicroelectronics, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, STP46N60M6 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
NVTFS5C466NLTAG
Renesas Electronics America Inc
2SK3107-T1-A
onsemi
NVHL080N120SC1
UnitedSiC
UF3C120150B7S
Infineon Technologies
IPA80R1K4CEXKSA2
Panjit International Inc.
PJQ5420_R2_00001
Infineon Technologies
IPB081N06L3GATMA1
Fairchild Semiconductor
FDU8580
Infineon Technologies
IPAN70R360P7SXKSA1
Renesas Electronics America Inc