IRLR120TRPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
$1.73
Available to order
Reference Price (USD)
1+
$1.73000
500+
$1.7127
1000+
$1.6954
1500+
$1.6781
2000+
$1.6608
2500+
$1.6435
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IRLR120TRPBF from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IRLR120TRPBF delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
IRF9Z24SPBF
Infineon Technologies
IRF8113TRPBF
Infineon Technologies
IPI076N12N3GAKSA1
Toshiba Semiconductor and Storage
SSM3K345R,LF
Rohm Semiconductor
2SK3541T2L
Infineon Technologies
SPD04N50C3ATMA1
Diodes Incorporated
DMN90H8D5HCT
Vishay Siliconix
SQJ459EP-T1_BE3
STMicroelectronics
STP12N60M2
Rohm Semiconductor