Shopping cart

Subtotal: $0.00

STP12N60M2

STMicroelectronics
STP12N60M2 Preview
STMicroelectronics
MOSFET N-CH 600V 9A TO220
$1.82
Available to order
Reference Price (USD)
1+
$1.86000
50+
$1.49880
100+
$1.34890
500+
$1.04912
1,000+
$0.86928
2,500+
$0.80932
5,000+
$0.77935
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

Related Products

Rohm Semiconductor

RSJ400N06FRATL

Panjit International Inc.

PJQ5476AL_R2_00001

Infineon Technologies

IPP120N04S402AKSA1

Alpha & Omega Semiconductor Inc.

AOD2N100

STMicroelectronics

STW12NK80Z

Nexperia USA Inc.

PHT4NQ10T,135

Rectron USA

RM50N60IP

Diodes Incorporated

DMN53D0LW-13

Alpha & Omega Semiconductor Inc.

AOT2618L

Top