Shopping cart

Subtotal: $0.00

IRF8113TRPBF

Infineon Technologies
IRF8113TRPBF Preview
Infineon Technologies
MOSFET N-CH 30V 17.2A 8SO
$1.07
Available to order
Reference Price (USD)
1+
$1.07000
500+
$1.0593
1000+
$1.0486
1500+
$1.0379
2000+
$1.0272
2500+
$1.0165
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

Related Products

Infineon Technologies

IPI076N12N3GAKSA1

Toshiba Semiconductor and Storage

SSM3K345R,LF

Rohm Semiconductor

2SK3541T2L

Infineon Technologies

SPD04N50C3ATMA1

Diodes Incorporated

DMN90H8D5HCT

Vishay Siliconix

SQJ459EP-T1_BE3

STMicroelectronics

STP12N60M2

Rohm Semiconductor

RSJ400N06FRATL

Panjit International Inc.

PJQ5476AL_R2_00001

Top