IPI076N12N3GAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 120V 100A TO262-3
$2.45
Available to order
Reference Price (USD)
500+
$1.84500
Exquisite packaging
Discount
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IPI076N12N3GAKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPI076N12N3GAKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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