IRF730APBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 400V 5.5A TO220AB
$2.01
Available to order
Reference Price (USD)
1+
$2.08000
50+
$1.68060
100+
$1.51250
500+
$1.17636
1,000+
$0.97470
2,500+
$0.90748
5,000+
$0.87387
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IRF730APBF, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRF730APBF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIHFBC40AS-GE3
Toshiba Semiconductor and Storage
TK65A10N1,S4X
GeneSiC Semiconductor
G3R45MT17D
Microchip Technology
APT6021BLLG
onsemi
2SK4065-DL-1EX
IXYS
IXTH30N50P
Taiwan Semiconductor Corporation
TSM085P03CS RLG
NXP USA Inc.
BUK754R0-55B,127
Vishay Siliconix
IRFP21N60LPBF
IXYS