IRF6795MTRPBF
Infineon Technologies
Infineon Technologies
IRF6795 - 12V-300V N-CHANNEL POW
$1.04
Available to order
Reference Price (USD)
4,800+
$0.88088
9,600+
$0.86240
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRF6795MTRPBF by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRF6795MTRPBF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4280 pF @ 13 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 75W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MX
- Package / Case: DirectFET™ Isometric MX
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