SQJQ140E-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 40 V (D-S)
$3.58
Available to order
Reference Price (USD)
1+
$3.58000
500+
$3.5442
1000+
$3.5084
1500+
$3.4726
2000+
$3.4368
2500+
$3.401
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SQJQ140E-T1_GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SQJQ140E-T1_GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 701A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.53mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
Related Products
Diodes Incorporated
DMP2240UWQ-7
IXYS
IXTA60N20X4
Rectron USA
RM6N800T2
Infineon Technologies
IPA50R650CEXKSA2
onsemi
FCU900N60Z
Nexperia USA Inc.
BSS84AKQBZ
Infineon Technologies
IRF3205ZLPBF
Alpha & Omega Semiconductor Inc.
AON6282
Diodes Incorporated
DMN2024UFDF-13
Infineon Technologies