STH275N8F7-2AG
STMicroelectronics
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
$6.24
Available to order
Reference Price (USD)
1,000+
$2.83720
2,000+
$2.71092
Exquisite packaging
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Discover STH275N8F7-2AG, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 315W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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