IXTA60N20X4
IXYS
IXYS
MOSFET ULTRA X4 200V 60A TO-263
$11.29
Available to order
Reference Price (USD)
1+
$11.29000
500+
$11.1771
1000+
$11.0642
1500+
$10.9513
2000+
$10.8384
2500+
$10.7255
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IXTA60N20X4, a high-quality Transistors - FETs, MOSFETs - Single from IXYS. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IXTA60N20X4 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Rectron USA
RM6N800T2
Infineon Technologies
IPA50R650CEXKSA2
onsemi
FCU900N60Z
Nexperia USA Inc.
BSS84AKQBZ
Infineon Technologies
IRF3205ZLPBF
Alpha & Omega Semiconductor Inc.
AON6282
Diodes Incorporated
DMN2024UFDF-13
Infineon Technologies
IPB65R190CFDATMA1
Diodes Incorporated
DMG2301LK-13
Renesas Electronics America Inc