IRF6678
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
$2.32
Available to order
Reference Price (USD)
1+
$2.32000
500+
$2.2968
1000+
$2.2736
1500+
$2.2504
2000+
$2.2272
2500+
$2.204
Exquisite packaging
Discount
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Experience the power of IRF6678, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRF6678 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MX
- Package / Case: DirectFET™ Isometric MX
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