RF4L055GNTCR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 5.5A HUML2020L8
$0.94
Available to order
Reference Price (USD)
1+
$0.94000
500+
$0.9306
1000+
$0.9212
1500+
$0.9118
2000+
$0.9024
2500+
$0.893
Exquisite packaging
Discount
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Optimize your electronic systems with RF4L055GNTCR, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, RF4L055GNTCR provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: HUML2020L8
- Package / Case: 8-PowerUDFN
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