N0601N-ZK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 60V 100A TO263
$1.54
Available to order
Reference Price (USD)
1+
$1.54000
500+
$1.5246
1000+
$1.5092
1500+
$1.4938
2000+
$1.4784
2500+
$1.463
Exquisite packaging
Discount
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Enhance your circuit performance with N0601N-ZK-E1-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust N0601N-ZK-E1-AY for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 156W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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