DMTH6004LPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 100A PWRDI5060-8
$1.88
Available to order
Reference Price (USD)
2,500+
$0.92945
Exquisite packaging
Discount
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Diodes Incorporated presents DMTH6004LPSQ-13, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMTH6004LPSQ-13 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Diodes Incorporated