UF3SC120040B7S
UnitedSiC
UnitedSiC
1200V/40MOHM, SIC, STACKED FAST
$26.83
Available to order
Reference Price (USD)
1+
$26.83000
500+
$26.5617
1000+
$26.2934
1500+
$26.0251
2000+
$25.7568
2500+
$25.4885
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of UF3SC120040B7S, a premium Transistors - FETs, MOSFETs - Single from UnitedSiC. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, UF3SC120040B7S is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
Nexperia USA Inc.
NXV40UNR
Renesas Electronics America Inc
UPA1872GR-9JG-E1-A
onsemi
FDC640P
Rectron USA
RM4N700S4
Alpha & Omega Semiconductor Inc.
AOI2N60
Fairchild Semiconductor
FDU6612A
Infineon Technologies
IPW60R099P6XKSA1
onsemi
NTD6415ANLT4G
Infineon Technologies
IPN80R750P7ATMA1
onsemi