IPT019N08N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 32A/247A 8HSOF
$4.97
Available to order
Reference Price (USD)
1+
$4.97000
500+
$4.9203
1000+
$4.8706
1500+
$4.8209
2000+
$4.7712
2500+
$4.7215
Exquisite packaging
Discount
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Optimize your electronic systems with IPT019N08N5ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPT019N08N5ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 159µA
- Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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