IXTY1R4N120P-TRL
IXYS
IXYS
MOSFET N-CH 1200V 1.4A TO252
$2.09
Available to order
Reference Price (USD)
1+
$2.08725
500+
$2.0663775
1000+
$2.045505
1500+
$2.0246325
2000+
$2.00376
2500+
$1.9828875
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTY1R4N120P-TRL by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTY1R4N120P-TRL inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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