IPP65R075CFD7AAKSA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE_COOLMOS PG-TO220-3
$8.81
Available to order
Reference Price (USD)
1+
$8.81320
500+
$8.725068
1000+
$8.636936
1500+
$8.548804
2000+
$8.460672
2500+
$8.37254
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPP65R075CFD7AAKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPP65R075CFD7AAKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 820µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 171W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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