DMT6007LFG-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 15A PWRDI3333
$1.24
Available to order
Reference Price (USD)
2,000+
$0.51504
6,000+
$0.49225
10,000+
$0.47597
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMT6007LFG-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMT6007LFG-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
Renesas Electronics America Inc
NEM090603M-28-A
Harris Corporation
IRF623R
Diodes Incorporated
DMT6015LFVW-7
Rohm Semiconductor
RQ3P300BHTB1
Diodes Incorporated
DMNH6008SPSQ-13
onsemi
NTHL045N065SC1
Renesas Electronics America Inc
RJK03P5DPA-00#J5A
Harris Corporation
IRF9533
Renesas
NP80N06MLG-S18-AY
Diodes Incorporated