IPP014N06NF2SAKMA2
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-TO220-3
$4.03
Available to order
Reference Price (USD)
1+
$4.03000
500+
$3.9897
1000+
$3.9494
1500+
$3.9091
2000+
$3.8688
2500+
$3.8285
Exquisite packaging
Discount
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Experience the power of IPP014N06NF2SAKMA2, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPP014N06NF2SAKMA2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 246µA
- Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: TO-220-3
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