DMTH31M7LPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V POWERDI506
$0.64
Available to order
Reference Price (USD)
1+
$0.64018
500+
$0.6337782
1000+
$0.6273764
1500+
$0.6209746
2000+
$0.6145728
2500+
$0.608171
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMTH31M7LPSQ-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMTH31M7LPSQ-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 5741 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 113W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
Related Products
Micro Commercial Co
SI3139KEA-TP
Infineon Technologies
IPDQ60R035CFD7XTMA1
onsemi
NTPF125N65S3H
Torex Semiconductor Ltd
XP202A0003PR-G
Harris Corporation
IRF9632
IXYS Integrated Circuits Division
CPC3720CTR
Diodes Incorporated
DMT6007LFG-7
Renesas Electronics America Inc
NEM090603M-28-A
Harris Corporation
IRF623R
Diodes Incorporated