IPF016N10NF2SATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V
$4.13
Available to order
Reference Price (USD)
1+
$4.13280
500+
$4.091472
1000+
$4.050144
1500+
$4.008816
2000+
$3.967488
2500+
$3.92616
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IPF016N10NF2SATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPF016N10NF2SATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Vishay Siliconix
SI7450DP-T1-RE3
Infineon Technologies
IPB330P10NMATMA1
Microchip Technology
APTM50SKM19G
onsemi
NTTFS034N15MC
Goford Semiconductor
GT025N06D5
Rohm Semiconductor
SCT2280KEGC11
Diodes Incorporated
DMT6009LFG-7
Renesas Electronics America Inc
2SK3162-91-E
IXYS
IXTT140N10P-TRL
Harris Corporation