SCT2280KEGC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 14A, THD, SILICON-CARBIDE
$13.68
Available to order
Reference Price (USD)
1+
$13.68000
500+
$13.5432
1000+
$13.4064
1500+
$13.2696
2000+
$13.1328
2500+
$12.996
Exquisite packaging
Discount
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Experience the power of SCT2280KEGC11, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SCT2280KEGC11 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 108W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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