IPB330P10NMATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO263-3
$6.25
Available to order
Reference Price (USD)
1+
$6.25000
500+
$6.1875
1000+
$6.125
1500+
$6.0625
2000+
$6
2500+
$5.9375
Exquisite packaging
Discount
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IPB330P10NMATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPB330P10NMATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 53A, 10V
- Vgs(th) (Max) @ Id: 4V @ 5.55mA
- Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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