DMT6009LFG-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 11A PWRDI3333
$1.14
Available to order
Reference Price (USD)
1+
$1.14000
500+
$1.1286
1000+
$1.1172
1500+
$1.1058
2000+
$1.0944
2500+
$1.083
Exquisite packaging
Discount
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Boost your electronic applications with DMT6009LFG-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMT6009LFG-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.08W (Ta), 19.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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