UPA2826T1S-E2-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
8P HWSON
$1.74
Available to order
Reference Price (USD)
1+
$1.74000
500+
$1.7226
1000+
$1.7052
1500+
$1.6878
2000+
$1.6704
2500+
$1.653
Exquisite packaging
Discount
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Enhance your circuit performance with UPA2826T1S-E2-AT, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust UPA2826T1S-E2-AT for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 20W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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