IPB180P04P403ATMA2
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 180A TO263-7
$4.85
Available to order
Reference Price (USD)
1+
$4.85000
500+
$4.8015
1000+
$4.753
1500+
$4.7045
2000+
$4.656
2500+
$4.6075
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPB180P04P403ATMA2 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPB180P04P403ATMA2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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