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SSM3K09FU,LF

Toshiba Semiconductor and Storage
SSM3K09FU,LF Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 400MA USM
$0.44
Available to order
Reference Price (USD)
3,000+
$0.08820
6,000+
$0.08330
15,000+
$0.07595
30,000+
$0.07105
75,000+
$0.06860
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323

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