PMV52ENER
Nexperia USA Inc.
Nexperia USA Inc.
PMV52ENE/SOT23/TO-236AB
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with PMV52ENER, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust PMV52ENER for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 630mW (Ta), 5.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Rectron USA
RM170N30DF
Microchip Technology
APT8052BLLG
IXYS
IXTA12N65X2
Infineon Technologies
IPU80R1K0CEAKMA1
Harris Corporation
IRF9630
Rohm Semiconductor
RS1E130GNTB
Panjit International Inc.
PJP6NA90_T0_00001
Renesas Electronics America Inc
RJK60S4DPP-E0#T2
Alpha & Omega Semiconductor Inc.
AO3422
Vishay Siliconix