PSMN0R9-25YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
$2.52
Available to order
Reference Price (USD)
1,500+
$0.79002
3,000+
$0.73735
7,500+
$0.70048
10,500+
$0.67415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PSMN0R9-25YLDX, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PSMN0R9-25YLDX is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.85mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 89.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6721 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 238W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Fairchild Semiconductor
FDMC8884
Toshiba Semiconductor and Storage
SSM3K09FU,LF
Renesas Electronics America Inc
NP100N04PUK-E1-AY
Alpha & Omega Semiconductor Inc.
AOTS21319C
Nexperia USA Inc.
PMV52ENER
Rectron USA
RM170N30DF
Microchip Technology
APT8052BLLG
IXYS
IXTA12N65X2
Infineon Technologies
IPU80R1K0CEAKMA1
Harris Corporation