IPA320N20NM3SXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 26A TO220
$1.73
Available to order
Reference Price (USD)
1+
$1.72894
500+
$1.7116506
1000+
$1.6943612
1500+
$1.6770718
2000+
$1.6597824
2500+
$1.642493
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPA320N20NM3SXKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPA320N20NM3SXKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 4V @ 89µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
Diodes Incorporated
DMTH4M70SPGW-13
Harris Corporation
IRF523
onsemi
NDCTR2065A
onsemi
NTMFS6H858NT1G
Nexperia USA Inc.
BUK9Y8R8-60ELX
Micro Commercial Co
MCAC95N065Y-TP
Infineon Technologies
IPDQ60R075CFD7XTMA1
Harris Corporation
RF1S4N100SM9A
onsemi
NVMFWS3D0P04M8LT1G
Renesas